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从铁磁金属到非磁性半导体的自旋注入

model on the spin injection in ohmic junction of the ferromagnetic metal/ nonmagnetic semiconductor structure

中文摘要英文摘要

本文提出了一个改进的铁磁金属/非磁半导体(FM/NS)欧姆结的自旋注入模型。改进的模型根据半导体中等电导率的特点,不仅考虑了电子流的扩散项对铁磁金属向半导体自旋注入的影响,还特别考虑了电子流的漂移项对自旋注入效率的影响,并引入了半导体中自旋的漂移长度和有效自旋翻转长度的概念,由此得出铁磁金属/非磁性半导体欧姆接触结构中自旋注入效率随电流增大而增加的结论。在低注入条件下,漂移长度比有效自旋翻转长度大得多,使漂移项对自旋注入效率的影响可以忽略;一般来说,在半导体中,漂移长度和有效自旋翻转长度随电子流的增大而变小,从而导致扩散项和漂移项对自旋注入效率的贡献都得到加强。所预期在较大电流下的自旋注入效率与实验结果定量符合。新模型成功解释了FM/NS欧姆结中自旋注入效率随电子流增大而提高的实验事实。

In this paper, a model on electrical spin injection from ferromagnetic metal to non-magnetic semiconductor has been built. This model takes into account not only the diffusion term of the current contribution to the spin polarization in non-magnetic semiconductor (which is a good approximation in the lower current), but also to consider the effect of drift term on spin polarization. We introduce the concepts of the drift length and the effective spin flip length. Drift length decides the contribution of drift term to spin current polarization. In the lower injection, it is much larger than the effective spin flip length in semiconductor, so its influence on spin polarization can be ignored. But the drift length and the effective spin flip length in semiconductor decreases with the current raising, resulting in increasing of diffusion and drift flow\

邓宁、张磊、陈培毅、董浩、任敏

半导体技术

磁结构自旋极化注入自旋极化率

Magnetic structurespin-polarized injectionspin polarization

邓宁,张磊,陈培毅,董浩,任敏.从铁磁金属到非磁性半导体的自旋注入[EB/OL].(2009-08-19)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/200908-364.点此复制

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