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大面积单层氮化硼薄膜的低压化学气相沉积合成方法

Synthesis of large-size monolayer hexagonal BN film by low pressure CVD

中文摘要英文摘要

本文报道利用低压化学气相沉积在柔性铜箔膜生长大面积原子单层六方氮化硼(h-BN)的方法。以Borazane粉末作为前驱体通过混合氢气/氩气的气体进入反应腔。将铜箔基板卷成圆柱状,可实现单层h-BN薄膜尺寸超过7英寸。与PMMA的援助,h-BN单层完全转移到4"硅片上,并进一步进行了光电应用表征。该技术可以转移于任何柔性基板的薄膜生长技术中。

We report the large-size synthesis of atomic monolayer hexagonal boron nitride (h-BN) film on flexible Cu foil by low pressure chemical vapor deposition (CVD) method. The borazane powder was used as the precursor carried by mixed hydrogen/argon gases. By rolling the Cu foil substrate into cylindrical shape, wafer-scale monolayer h-BN film has been achieved in a size over 7 inch. With the aid of PMMA, the h-BN monolayer was perfectly transferred onto 4" Si wafer for characterization and further electrical applications. This technique could be transferred to thin film growth on any flexible substrates.

伍臣平、蔡端俊

材料科学化学非金属元素化学工业、非金属无机化合物化学工业

氮化硼低压化学气相沉积大面积

BNMonolayerCVD

伍臣平,蔡端俊.大面积单层氮化硼薄膜的低压化学气相沉积合成方法[EB/OL].(2015-11-20)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201511-308.点此复制

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