缓冲层退火对氧化锌薄膜结晶性质的影响

In this paper, ZnO buffer layer were deposited on c-axis sapphire substrates by Metal-organic chemical vapor deposition and then,annealing in the nitrogen atmosphere under different temperature. ZnO thin films were grown on nuclear layer with different annealing temperature. Effect of buffer layer with different annealing temperature on the crystallization properties of ZnO films in the secondary growth process was studied by characterization and analysis equipments which included X-ray diffraction, scanning electron microscopy and Hall tester. Comparing with depositing ZnO film on c-axis sapphire substrates directly, the result showed that the crystal quality of ZnO film had been improved significantly by optimized nucleating layer.