硅CMOS片上螺旋电感基于特征函数法的建模

We present an extended review on the modeling of silicon CMOS on-chip spiral inductors based on S-parameter measurement. A series of equivalent circuits including different number of n-π structure with both symmetric and asymmetric geometries have been studied. The parameter extraction is carried out using a set of characteristic functions derived from the equivalent circuit without iterative optimization. As verified by a series of inductors fabricated with a 0.18 μm CMOS process, a good agreement between the measured and simulated data over a wide frequency range has been obtained. The characteristic-function approach can alleviate the potential problem of multiple solutions pertaining to conventional numerical method based on iteration optimization.