喷淋头高度对MOCVD生长GaN外延层质量的影响

series of GaN epilayers were grown with different showerhead gap position using Metal-organic Chemical Vapor Deposition. The properties of GaN epilayers were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD) and White-Light Interferometry. The effect reason of showerhead gap position on the growth rate and quality of GaN epitaxy films were analyzed. The result shows that, with the increasing in showerhead gap position, the roughness of GaN epitaxy films decreased and the thickness was more uniform, but the growth rate of GaN was decreased distinctly and the quality was also worse.