基于Al/TiOx/Al结构的低成本双极性阻变存储器件
Low-cost bipolar RRAM device based on Al/TiOx/Al structure
本文基于与CMOS工艺完全兼容的TiOx二元金属氧化物材料，采用价格低廉的金属Al作为上下电极，制备了一种成本低廉的Al/TiOx/Al RRAM存储器件单元。该结构器件除了具有稳定的双极性电阻转变特性以及好的数据保持特性，还具有低的操作电压，并且不同器件单元之间的电阻转变特性具有很好的一致性。
In this paper, we propose a low-cost Al/TiOx/Al structure device for bipolar RRAM applications, in which both the bottom electrode (BE) and top electrode (TE) materials are fabricated from Al with reduced material cost. Furthermore, the TiOx material also shows good compatibility with the current CMOS technology to further reduce cost. The low-cost Al/TiOx/Al device shows reproducible resistive switching characteristics with low voltage, good retention, as well as good uniformity.
李颖弢、袁鹏
半导体技术微电子学、集成电路电子元件、电子组件
微电子学与固体电子学阻变存储器二元金属氧化物氧化钛阻变特性
Microelectronics and solid state electronicsRRAMBinary metal oxidesTiOxResistive switching characteristics
李颖弢,袁鹏.基于Al/TiOx/Al结构的低成本双极性阻变存储器件[EB/OL].(2015-10-09)[2025-08-10].http://www.paper.edu.cn/releasepaper/content/201510-38.点此复制
评论