MBE生长Be掺杂GaAs光学特性及硫钝化处理研究

P-type GaAs film with uniform surface morphology, better crystal quality and higher carrier concentration has grown by molecular beam epitaxy techniques use Be as dopant source, and it was used to investigated the effect of sulfur passivation on the luminescence intensity. The sulfur passivation experiment for Be-doped GaAs was conducted with the sulfur passivation solution prepared by 8% (NH4)2S solution with deionized water and isopropanol in a volume ratio of 1:10 respectively. After sulfur passivation experiment the photoluminescence spectrum was measured to investigate the photoluminescence properties for the Be doped GaAs. The PL spectrum show that the PL intensity of the both samples were enhanced, in addition, in our experiment the PL intensity for the sample treated by 8% (NH4)2S solution with isopropanol as solvent was enhanced the most.