直流反应磁控溅射氮化钛薄膜电极的工艺研究
Process Research of Magnetron Sputtered TiN Film Electrodes
采用直流磁控溅射技术在Si（100）基片上制备了不同溅射电流以及不同氩氮比下的氮化钛（TiN）纳米薄膜电极。通过表面台阶测试仪﹑四探针测试仪及X射线衍射（XRD）对TiN薄膜的厚度﹑电阻率及晶体结构进行了研究。结果表明：溅射电流为0.4A，氩氮比为12:1时，TiN薄膜厚度较薄，且导电性优秀。薄膜中择优取向主要为（111）及（200），I（200）/I（111）比例较高时，对应薄膜导电性更优秀。
In this paper，the titanium nitride(TiN) nanometer film electrodes were deposited by DC magnetron sputtering on sub-states of Si(100).The impacts of deposition conditions(sputtering current and the ratio Ar to N2 on TiN films were evaluated. The microstructures and macro-properties of the TiN films were characterized with X-ray diffraction, atomic force microscopy, suface step tester and Four-Point probes. The results show that the TiN films were thinner and excellently conductive, when sputtering current was 0.4A, and the ratio Ar to N2 was 12:1. The main preferred orientation of the films were (111) and (200), and the intensity ratio of (200) to (111) was higher , the conductivity of films was more excellent.
王男、周大雨
电工材料半导体技术电子元件、电子组件
氮化钛纳米薄膜电极优良导电性氩氮比择优晶向
itanium nitrideNano-film electrodeExcellent conductivityAr/N2Preferred orientation
王男,周大雨.直流反应磁控溅射氮化钛薄膜电极的工艺研究[EB/OL].(2014-04-16)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201404-195.点此复制
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