硅微通道阵列高温氧化过程中热应力分布模拟
SIMULATION OF THERMAL STRESS DISTRIBUTION IN SILICON MICROCHANNEL ARRAY DURING HIGH TEMPERATURE OXIDATION
硅微通道阵列经高温氧化过程会产生不规则形变，是高温环境下产生的热应力所致。本文通过用ABAQUS有限元模拟软件对硅微通道阵列在高温氧化过程中的形变现象进行模拟仿真，得到了1100℃硅微通道阵列热应力分布图以及5个特殊节点所受应力随温度的变化图，其中，外角所受应力为307N，内角所受应力为33N，内壁中心点所受应力为50N。不同节点所受应力大小不同，产生形变。
he microstructures of silicon microchannel array are irregularly deformed by high temperature oxidation, which is caused by thermal stress in high temperature environment. In this paper, the microstructures of silicon microchannel arrays are simulated by ABAQUS finite element simulation software. The thermal stress distribution of the silicon microchannel array at 1100 ℃ and the stress variation of the five special nodes are obtained.In which the outer corner of the stress is 307N, the internal angle of the stress is 33N, the inner wall of the center of the stress is 50N. The stress of different nodes is different, resulting in deformation
端木庆铎、杨继凯、王宇、孙振庭、王国政
力学材料科学微电子学、集成电路
高温氧化热应力有限元模拟
High temperature oxidationhermal StressFinite element simulation
端木庆铎,杨继凯,王宇,孙振庭,王国政.硅微通道阵列高温氧化过程中热应力分布模拟[EB/OL].(2016-12-28)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/201612-582.点此复制
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