ITO薄膜的微结构及其分形表征
Study of Microstructure and Fractal of ITO Films
采用直流磁控溅射法制备氧化铟锡（ITO）薄膜，用XRD、TEM和分形理论测试和分析了不同退火时间ITO薄膜的微结构。XRD分析表明：退火时间持续增加，薄膜的晶格常数先减小后略有增大，这是薄膜中Sn4+取代Sn2+导致晶格常数减小和压应力不断释放导致晶格常数增大共同作用的结果。分形研究表明：分形维数随退火时间的延长先减小后增大，说明薄膜中平均颗粒尺寸先减小后增大，与XRD的研究结果一致。
Indium Tin Oxide (ITO) films are prepared by DC magnetron sputtering. The effects of different annealing time on the microstructure of the ITO films are characterized by XRD, TEM and fractal. The XRD results show that as the annealing time increasing, the effect of Sn4+ replace Sn2+ combine with releasing compression stress induces the lattice constant decreased at first, and increased later. Fractal results show that with the annealing time increasing, fractal dimension decreased at first and increased later, revealing that the mean grain size varies with the same way as fractal dimension.
曹春斌、宋学萍、江锡顺、孙兆奇、吕建国、蔡琪
晶体学半导体技术材料科学
氧化铟锡（ITO）薄膜，微结构，分形，XRD
indium tin oxide (ITO) films microstructure fractal XRD
曹春斌,宋学萍,江锡顺,孙兆奇,吕建国,蔡琪.ITO薄膜的微结构及其分形表征[EB/OL].(2007-12-20)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/200712-503.点此复制
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