光热退火的光量子效应对富硅氮化硅薄膜特性的影响

he SRSN films were deposited on monocrystalline silicon and quartz substrates using bipolar pulse and RF magnetron co-sputtering. For comparison, the samples were then treated in N2 atmosphere by conventional rapid photo-thermal annealing and shading rapid photo-thermal annealing at temperature in a range of 950-1100℃，respectively. Raman spectra and grazing incident X-ray diffraction (GIXRD) were adopted to analyze the crystal structure of silicon quantum dots, and Fourier transform infrared (FTIR) spectroscopy analyzed the changes of the bonding configurations in the films. In addition, photoluminescence (PL) generated from the samples was investigated in detail. Experimental results show that the shading photo-thermal annealing method is quite good for the microstructure of SRSN films and photo-generated carrier tunneling transferring, and it is conducive to the formation of silicon quantum dots. The samples treated with shading photo-thermal annealing (no quantum photo-effects) posses higher Si crystal volume fraction and density, lower crystallization temperature than the conventional photo-thermal annealing samples. That is to say, the photon effect in rapid photo-thermal annealing has a negative influence on the formation and crystallization of silicon quantum dots in the SRSN film.