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白光LED氮化物氮氧化物荧光粉的制备与其发光性能的研究

he preparation and optical properties of nitrogen oxides phosphors for white LED

中文摘要英文摘要

白光LED 由于其高发光效率、较长的使用寿命以及低能耗等特点引起了人们的广泛关注,被作为在照明和显示领域的新一代光源。传统白光是由蓝光LED芯片和黄光发射YAG:Ce3+ 荧光粉组合产生,然而由于缺少红光成分造成显色指数较低。最近,关于红光发射的荧光粉有很多报道,一些氮化物和氮氧化物荧光粉在白光LED应用方面有很好的性能表现,这些荧光粉具有较高的显色指数和稳定的化学性能可以弥补YAG:Ce3+ 的不足。通过添加不同的助熔剂两步高温固相法合成了(Sr1-xBax)2Si2O2N2: Eu2+ 荧光粉。加了NH4F助熔剂且当 x=0.5时荧光粉显示出了最好的发射强度,发射强度是YAG:Ce3+的113%倍,发射峰的范围在538 nm -556 nm之间变化通过改变x 的值。激发峰的位置在360 nm左右,因此合成的荧光粉可以被蓝光InGaN芯片激发。结果表明这种荧光粉在白光LED方面有潜在的应用。

he white light-emitting diodes(LEDs) have drawn much attention as a new illumination and displays because of their high light efficiency, long service lifetime and low energy consumption. The conventional method to produce a white light is making up a blue LED chip with a yellow-emitting phosphor,YAG:Ce3+, however it has a low color render index, because it lacks a red component. Currently, many report have been carried out to develop red-emitting phosphors, some nitride and oxynitride phosphors have good performance for white LED applications. These phosphors with high color rendering index and chemical stability can fix the disadvantage of YAG: Ce3+, (Sr1-xBax)2Si2O2N2: Eu2+ phosphors were prepared by solid-state reaction with two-step processes using different fluxs. The emissions bands ranged from 538nm to 556nm for change the value of x, the phosphor with NH4F flux and When x=0.5 shows the highest emission intensity. When x=0.5 it has highest luminescence output, which is 113% times as high as that of (Y,Gd)3(Al,Ga)5O12:Ce3+. The excitation spectra peaking at about 360nm so that the resultant phosphor can be excited by blue InGaN chips. The results show that this phosphor has a potential application in WLEDs.

王尧、朴贤卿、周广洲、吕雁鹏、赵凤阳

光电子技术半导体技术化学

Eu2+ 掺杂白光LED光学性质

Eu2+-dopedWhite light-emitting diodeOptical properties

王尧,朴贤卿,周广洲,吕雁鹏,赵凤阳.白光LED氮化物氮氧化物荧光粉的制备与其发光性能的研究[EB/OL].(2014-08-20)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201408-186.点此复制

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