基于AlN/AlGaN超晶格结构高质量Si掺杂Al0.49Ga0.51N的MOCVD生长
High quality Si doped Al0.49Ga0.51N grown on AlN/AlGaN superlattice with MOCVD
在本论文中，通过采用一套20周期的AlN/Al0.4Ga0.6N超晶格插入层制备了高质量的Si掺杂Al0.49Ga0.51N，厚度达到1.5μm。（0002）面X射线衍射仪测试的摇摆曲线表面其半高宽仅为295arcsec，（10-15）面的2θ-ω 扫描可见多个超晶格衍射峰，表明所生长材料晶体质量高，进一步通过对（10-15）面的倒易空间测试，分析了其中的应力情况。表面形貌通过原子力显微镜表征，其5μm×5μm范围平均粗糙度仅为0.848nm，达到原子级平整。通过室温Hall测试与C-V测试的结合分析表面n-Al0.49Ga0.51N材料导电性能良好，电子浓度高达4.2×10^18cm^-3,电子迁移率达到65.5cm^2/Vs。最后对300μm×300μm尺寸采用该n-Al0.49Ga0.51N结构的310nm UV LED进行IV测试表明，20mA直流偏置时电压仅为6.1V。
In this paper, 1.5 um thick high quality Si doped Al0.49Ga0.51N layer was obtained by inserting a set of 20 periods AlN/Al0.4Ga0.6N superlattices for strain relief and improvement of crystal structure quality. The 295 arcsec FWHM of (0002) X-ray diffraction rocking curve indicates high crystal quality of the layer and the (10-15) reciprocal lattice map was obtained to estimate the strain state of the n-Al0.49Ga0.51N. The surface morphology was investigated through atomic force microscope. Room temperature Hall and Capacitance-Voltage measurement show that the electron concentration is as high as 4.2×10^18 cm^-3 with a mobility of 65.5 cm^2/Vs. 310nm UV LED structures were grown on this n-Al0.49Ga0.51N layer. The current voltage characteristic of the 310nm UV LED was measured, and the working voltage under 20mA bias is 6.1V.
方妍妍、陈圣昌、陈长清、田武、戴江南、李洋、吴志浩、李森林
半导体技术晶体学光电子技术
n-Al0.49Ga0.51NlN/AlGaN 超晶格金属有机化学气相沉积（MOCVD）
n-Al0.49Ga0.51NAlN/AlGaN superlatticeMetal organic chemical vapor deposition (MOCVD)
方妍妍,陈圣昌,陈长清,田武,戴江南,李洋,吴志浩,李森林.基于AlN/AlGaN超晶格结构高质量Si掺杂Al0.49Ga0.51N的MOCVD生长[EB/OL].(2013-03-11)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201303-382.点此复制
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