微电子机械系统用高几何精度扩散片的研制
he effects of internal stress on the geometry parameters in the diffused wafer
选取高几何精度的硅片进行硼扩散，硼扩散工艺采用双面扩散，然后经过单面磨削后，加工成单面扩散片，在此过程中，扩散片的几何参数有很大变化。本篇论文通过研究影响扩散片几何参数变化的各种因素，制定相应的方案，使扩散片几何参数基本恢复到扩散前的水平。
he factors that affected the geometry parameters include the situation of wafer before diffusion, doping elements and doping distribution. In this report, the factors were systematically investigated by finely controlling them. It was found that the geometry parameters in the doped wafer were repaired after the fine control of the factors.
史继祥、王聪、佟丽英
半导体技术微电子学、集成电路
硼扩散片 几何参数 单面减薄 双面抛光片
geometry parameters boron diffusion KOH process
史继祥,王聪,佟丽英.微电子机械系统用高几何精度扩散片的研制[EB/OL].(2006-12-08)[2025-08-18].http://www.paper.edu.cn/releasepaper/content/200612-170.点此复制
评论