硅基晶圆级倒置发光量子点显示器件
Wafer-scale inverted light-emitting quantum dots display device
本文报导了在二氧化硅晶圆上通过旋涂法制备倒置结构的量子点发光二极管（QD-LEDs），其中利用ITO作为阴极,金属氧化物层（ZNO）提供电子，AL作为阳极提供空穴，采用CdSe/ZnS作为量子点发光层，与传统的正置结构进行参数对比。实验结果表明，倒置结构的量子点发光二极管在发光效率，光电转换率，以及可集成性上都展现出了更优异的特性。
In this paper，we report on the fabrication of wafer-sacle quantum dot light emitting diode devices(QD-LEDs) using inverted device structure with spin-coating technique. In this structure of QD-LEDs , ITO was used as cathod;metal oxide layer(ZNO) was used to provide electron, and AL was used as anode to supply hole. We use CdSe/ZnS quantum dots as emissive layer. Compared with conventional structure, the inverterd device structure exhibits high electroluminescence intensity, high photoelectric conversion rate and optimal performance of integratability.
李驰、刘向、陶治、雷威
光电子技术半导体技术微电子学、集成电路
量子点倒置结构氧化锌
quantum dotinverted device structureZNO
李驰,刘向,陶治,雷威.硅基晶圆级倒置发光量子点显示器件[EB/OL].(2014-02-05)[2025-07-18].http://www.paper.edu.cn/releasepaper/content/201402-63.点此复制
评论