表面硫钝化对GaAs材料光响应特性的影响研究

s one of the most important III-V semiconductor materials, Gallium arsenide (GaAs) is widely used in optoelectronic devices due to its high electron and hole mobility. However, the surface states of GaAs materials seriously affect its properties, hence hinder the improvement of the performance of GaAs based devices. It is believed that the surface state density of GaAs materials can be significantly lowered by surface sulfur passivation. A 14-fold enhancement in the PL intensity is observed on the comparative investigation of the same individual sample with and without sulfur passivation layer. Also, GaAs sample treated with sulfide solutions is also found to produce a 4-fold increase in the photocurrent and responsivity. The improvement of the performance is contributed to the variation of the surface density and the Schottky barrier height during the passivation process. The study of sulfur passivation provides an important basis for the study of high performance GaAs based optoelectronic devices.