碳热还原法快速同质外延(100) β-Ga2O3厚膜的研究

his paper presents the successful rapid homoepitaxy of β-Ga2O3 homoepitaxial thick films and Sn-doped β-Ga2O3 homoepitaxial thick films on (100) β-Ga2O3 substrates by carbon thermal reduction method. The characterization of the homogeneous epitaxial thick films is carried out by XRD characterization, SEM characterization, and AFM characterization, and the results show that the (100) β-Ga2O3 epitaxial thick film has a single crystalline orientation with a flat and dense surface morphology; through the XRD curves, a small amount of SnO2 doping improves the crystalline quality of the thick film, and the half-height width of the diffraction peaks of the Sn-doped gallium oxide thick film (400) is 3.911 arcsec, with high crystalline quality, and its growth rate can reach 22 μm/h. Comparative analysis of the results shows that the carbothermal reduction method can rapidly homogeneously epitaxialize high-quality gallium oxide thick films on (100) β-Ga2O3 substrates, and a small amount of SnO2 doping can improve the crystalline quality of the thick films, which is of great significance for the related research of (100) β-Ga2O3. It is of great significance for (100) β-Ga2O3 related research.