基于AlGaN电子阻挡层的ZnO异质结激子发光二极管的研制

We achieved the Ultraviolet light emitting under electroluminescence (EL) emissions by introducing AlGaN Electron Blocking Layer between n-ZnO and p-GaN. The n-ZnO/AlGaN/p-GaN heterojunction presents a representative current rectification property with the threshold voltage of 15V. The emitting light is relatively strong near-Ultraviolet. In addition, we studied the electroluminescence (EL) emissions of n-ZnO films doped with different quantity of Ga. We found blueshift happens when the quantity of dopant Ga into ZnO film is increased. Compare the electroluminescence (EL) spectra of n-ZnO/AlGaN/p-GaN heterojunction and n-ZnO/p-GaN heterojunction, we proved that the introduction of AlGaN layer has effectively restricted the injection of electrons from ZnO layer to GaN layer, which is also theoretically supported by Anderson model.