高压功率器件的设计

ue to the development of modern mobile communications and microwave communicati-ons,demands are improving rapidly for microwave semiconductor devices with higher power and lower noise.Traditional Si devices are unable to meet the new requirements of higher performance in high frequency and lower cost.So the SiGe/Si devices have been proposed and investigated,whose fabrication process is compatible with traditional Si process so as to reduce fabrication costs.It has been shown that the performance of SiGeHeterojunction Bipolar Transistor (SiGe HBT)in high frequency is much better than that of Si Bipolar Junction Transistor(Si BJT),and is better than that of AlGaAs/GaAs Metal Semiconductor Field Effect Transistor(AlGaAs/GaAs MESFET)in some aspects.Thus,the SiGe technology is very promising.