液封直拉磷化铟单晶的湿法腐蚀研究
Micro-defect of LEC InP by Wet Etching Process
采用原位磷注入合成法在富磷熔体中生长磷化铟(InP)单晶体材料，用两种腐蚀试剂对掺S和掺Fe的单晶片进行研究，用自主配制的CH (CrO3/HBr)腐蚀液对(111)In面InP晶片进行腐蚀，取得了较好的效果。经过多次实验确定了(100)、(111)P面InP AB腐蚀和InP (111)In面CH腐蚀的最佳腐蚀条件，清晰地观察到了InP单晶中存在的线状蚀坑、环状蚀坑、位错排和小角晶界等缺陷形貌，并对各种类型缺陷的形成机理进行了分析。
oped InP single crystals were grown in phosphorus-rich melt by in-situ phosphorous injection synthesis liquid encapsulated Czochraski (LEC) method. S-doped and Fe-doped InP wafer were studied by two kinds of etchants. (111) In InP wafer was etched by self-prepared CH (CrO3/HBr) etchant, And achieved good results. The best etching conditions for AB etchant and CH etchant were obtained by numbers of experiment. Kinds of microdefect were observed after etching, And formation mechanism of some types of defect was analyzed.
李晓岚、陈爱华、杨帆、孙聂枫、杨瑞霞
晶体学半导体技术
微电子学与固体电子学InP湿法腐蚀
Microelectronics and solid-state electronicsInPWet Etching
李晓岚,陈爱华,杨帆,孙聂枫,杨瑞霞.液封直拉磷化铟单晶的湿法腐蚀研究[EB/OL].(2013-11-06)[2025-04-26].http://www.paper.edu.cn/releasepaper/content/201311-108.点此复制
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