种大幅度提高镶嵌在二氧化硅中的硅纳米晶的光致发光强度的方法

n approach combining backside and front-side doping of Ce3+ in Si nanocrystals embedded in SiO2 (SNSO) with hydrogen passivation was developed in order to largely enhance the photoluminescence (PL) of Si nanocrystals. The sample of SNSO was prepared via a phase separation process of a SiO thin film evaporated onto a substrate. The key point of this approach is the backside doping, for which a SiO2 buffer layer was placed between the layers of CeF3 and SiO, so that, after annealing at 1100C, SNSO was formed via the phase separation process, and meanwhile, Ce3+ doping was accomplished without disrupting the formation of SNSO. The front-side doping was then performed by evaporating CeF3 onto the front surface of SNSO, followed by diffusion annealing at 500C. In this work, the two-side doping enhanced the PL intensity of Si nanocrystals by a factor of 7.3. Finally, hydrogenation of the doped sample was applied at 650C, which further increased the PL of Si nanocrystals by a factor of 2.0.