|国家预印本平台
首页|Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

中文摘要英文摘要

Laterally coupled indium-zinc-oxide electric-double-layer [EDL] transistors gated by solution-processed sodium alginate electrolyte films are self-assembled on glass substrates. Due to the strong EDL effect, a low-operation voltage of 1.5 V, a high-curren

Laterally coupled indium-zinc-oxide electric-double-layer [EDL] transistors gated by solution-processed sodium alginate electrolyte films are self-assembled on glass substrates. Due to the strong EDL effect, a low-operation voltage of 1.5 V, a high-curren

Shi, Y [Shi, Yi][ 1,2 ]、Wan, X [Wan, Xiang][ 1,2 ]、Liu, YH [Liu, Yanghui][ 1,2 ]、Zhu, LQ [Zhu, Li Qiang][ 1,2 ]、Wan, Q [Wan, Qing][ 1,2 ]

10.12074/201705.00419V1

微电子学、集成电路半导体技术电子元件、电子组件

Lateral coupling爀lectric-double-layer爐hin-film爐ransistors

Shi, Y [Shi, Yi][ 1,2 ],Wan, X [Wan, Xiang][ 1,2 ],Liu, YH [Liu, Yanghui][ 1,2 ],Zhu, LQ [Zhu, Li Qiang][ 1,2 ],Wan, Q [Wan, Qing][ 1,2 ].Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes[EB/OL].(2017-05-02)[2025-08-02].https://chinaxiv.org/abs/201705.00419.点此复制

评论