dTe材料中氢与阳离子空位复合杂质的束缚能
Binding Energy of Hydrogen-Cd Vacancy Complex in CdTe
我们用基于密度泛函理论的第一性原理方法计算了CdTe材料中H与阳离子空位的复合杂质的电子结构和电学性质,通过弛豫我们得到了三种典型的H-VCd复合杂质。通过计算形成能和束缚能,我们讨论了三种结构的稳定性。结果表明三种复合杂质形成的过程都是放热反应。 另外, 复合杂质在形成的过程中伴随着少数载流子的补偿,少子浓度的减少将直接导致少子寿命增加。 这个结论与实验是符合的。动力学能级的分析表明复合杂质的形成能够钝化Cd空位引入的深能级,我们对H钝化作用的机制进行了简单分析和讨论。
he structural and electronic properties of hydrogen-Cd vacancy complex in CdTe have been studied by using density functional theory. Three typical complexes between hydrogen and Cd vacancy were found in our present study. The stablest complex P2 was predicted by using the formation energy and the binding energy. We found that the formation of the complex is exothermic and its binding energy is extremely large. The analysis of the transition energy level indicates that the forming of the complex turns the double acceptors caused by Cd vacancy to be a single one. The position of the single acceptor deeper than the shallow acceptor derived from the cation vacancy. At the same time, the forming of the complex directly increases the lifetime of the minority carrier from decreasing its concentration. The mechanism of the hydrogen passivation effect was also briefly discussed in our present study.
曲晓东、钟建新、孙立忠、陈元平、陆卫
物理学晶体学半导体技术
复合杂质束缚能dTe
complex impuritybinding energyII-VI semiconductor
曲晓东,钟建新,孙立忠,陈元平,陆卫.dTe材料中氢与阳离子空位复合杂质的束缚能[EB/OL].(2009-01-12)[2025-08-22].http://www.paper.edu.cn/releasepaper/content/200901-466.点此复制
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