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多铁耦合隧穿磁阻效应研究

he Tunneling Magnetic Resistance in Multiferroic Magnetic Junction

中文摘要英文摘要

磁隧道结在数据存储、传感器等领域有广泛的应用。近年来人们希望在同一个器件中同时集成铁电与铁磁材料,期望通过多铁耦合效应实现对磁输运性质进行多自由度的控制。本文通过构建非平衡格林函数模型对(Mn,Zn)O/(Li,Zn)O/(Mn,Zn)O多铁耦合磁隧道结的自旋输运特性进行了研究。结果发现,在低温低偏压条件下能获得较大的隧穿磁阻TMR,随着温度升高或偏压增加隧穿磁阻TMR迅速降低。这是由于在此条件下,电子在自旋向上和自旋向下两个子带中的分布接近相同所致。铁电隔离层中的电偶极矩方向可调控隧穿磁阻TMR的大小。这是由于电偶极矩方向向左或向右时分别会在发射极界面或收集极界面形成一个势垒,而在收集极界面处的势垒更易受到偏压的作用而降低,导致更低的隧道磁阻TMR。高温导致自旋极化效应和隧穿磁阻TMR快速衰减。

Magnetic tunnel junction has widely application in data storage, sensor and so on. Recently people tried a lot to integrate ferroelectric and ferromagnetic in one device, so called multiferroic device. It maybe realize the multi free degree control of magnetic transport by coupling the ferroelectric and ferromagnetic effects. Here a non-equilibrium Green-function model is employed to investigate the spin transport properties in a multiferroic magnetic tunnel junction (Mn,Zn)O/(Li,Zn)O/(Mn,Zn)O. It shows that the large tunneling magnetic (TMR) can be achieved in low temperature and low bias. With increasing temperature or bias, the TMR deceases rapidly due to the similars electrons distribution in spin up and spin down sub-bands. The ferroelectric dipole direction can control the TMR at low bias. Due to the ferroelectric dipole, a barrier is formed in the interface between the emittor and the space layer for the dipole left or the collector and the space layer for the dipole right. And the barrier in the interface between the collector and space layer can be lowed more easyly by the bias that the one between the emittor and the space layer. High temperature leads rapidly dampling for both spin polarization and TMR.

黎明锴、龙德兵、何云斌、罗明海

物理学半导体技术电子元件、电子组件

自旋电子学磁隧道结铁电隔离层隧穿磁阻效应

SpintronicsMagnetic Tunnel JunctionFerroelectric Space LayerTunneling Magnetic Resistance

黎明锴,龙德兵,何云斌,罗明海.多铁耦合隧穿磁阻效应研究[EB/OL].(2016-05-23)[2025-08-11].http://www.paper.edu.cn/releasepaper/content/201605-986.点此复制

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