高介电高压电活性Nb掺杂PLZT压电陶瓷的研究
Study on high piezoelectric and high dielectric
本文探讨了Nb2O5掺杂Pb1-xLax(ZraTi1－a)1-x/4O3 (0<a<1，x＝0.07) (简称PLZT)压电陶瓷性在准同型相界处的介电与压电性能。研究结果表明：当Zr/Ti在56.5/43.5至48/42之间时，体系位于准同型相界附近，而当Zr/Ti＝57.5/42.5，合成温度1050℃，烧结温度为1240℃时，各项性能均达到最佳值，ε33T/ε0＝3100，tanδ=0.0196， d33=560PC/N， Kp=0.67，TC＝210℃。
he research focused on the piezoelectric and dielectric properties in the region near the morphotropic phase boundary of PLZT Piezoceramics. A conclusion can be drawn when Ti concentration changes from 0.420 to 0.435, the composition lies near the morphotropic phase boundary, when the Zr/Ti＝57.5/42.5 and temperature reaches to 1240℃, The properties optimized results of d33 =560PC/N, ε33T/ε0=3100, Kp=0.67.
刘培祥、孙清池、何杰、李红元
电工材料
Nb2O5介电常数压电常数居里温度
Nb2O5 dielectric constant piezoelectric constant Curie temperature
刘培祥,孙清池,何杰,李红元.高介电高压电活性Nb掺杂PLZT压电陶瓷的研究[EB/OL].(2007-03-23)[2025-08-16].http://www.paper.edu.cn/releasepaper/content/200703-392.点此复制
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