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Ⅵ/Ⅲ族源输入摩尔比对氧化镓薄膜结晶质量和光学特性的影响

Effect of Ⅵ/Ⅲ Ratio on Crystalline and Optical Properties of Gallium Oxide Films

中文摘要英文摘要

本文利用低压金属有机物化学气相沉积方法,以高纯氧气和三乙基镓为反应源,在不同氧源和镓源摩尔比(Ⅵ/Ⅲ比)条件下,在c面蓝宝石衬底上制备了氧化镓薄膜。利用薄膜厚度分析仪、X射线衍射仪和紫外-可见-红外双光束分光光度计对薄膜的结晶质量和光学特性进行了表征。薄膜厚度测试结果表明氧化镓薄膜的生长速率随着Ⅵ/Ⅲ比的减小而增大;X射线衍射测试结果表明,氧化镓薄膜的结晶质量随Ⅵ/Ⅲ比的下降而升高,当Ⅵ/Ⅲ比为28000时,氧化镓薄膜在可见光波段透射率达85%,经计算其光学带隙为4.85 eV。

In this paper, gallium oxide films with different Ⅵ/Ⅲ ratios were deposited on c-plane sapphire substrates by metal-organic chmeical vapor deposition. Triethylgallium and high-purity oxygen were used as the precursors of gallium and oxygen, respectively. Effect of Ⅵ/Ⅲ ratio on crystalline and optical properties of gallium oxide films was characterized by Filmetrics system, X-ray diffraction and double-beam UV-VIS-NIR spectrophotometer. The measured results of film thickness and X-ray diffraction showed that the growth rate and crystalline properties of gallium oxide films were improved with decreasing Ⅵ/Ⅲ ratios. The average transmittance of the gallium oxide films with a Ⅵ/Ⅲ ratio of 28000 in the visible wavelength range was over 85% and the calculated optical band gap was about 4.85 eV.

杜国同、申人升、柳阳、夏晓川、冯艳彬、陈远鹏、庄睿、陶鹏程、梁红伟

半导体技术光电子技术晶体学

氧化镓Ⅵ/Ⅲ比X射线衍射金属有机物化学气相沉积

Gallium OxideⅥ/Ⅲ ratiosX-Ray diffractionMOCVD

杜国同,申人升,柳阳,夏晓川,冯艳彬,陈远鹏,庄睿,陶鹏程,梁红伟.Ⅵ/Ⅲ族源输入摩尔比对氧化镓薄膜结晶质量和光学特性的影响[EB/OL].(2014-04-16)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201404-209.点此复制

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