β-氧化镓基日盲紫外探测器性能研究

he third generation of semiconductorgallium oxide has great band-gap width, high breakdownfield strength, fast electron saturation rate, excellent physical and chemical properties, and has excellentdevelopment prospects in the field of semiconductor optoelectronic devices. Based on β-gallium oxide homogeneity epitaxy, solar-blind ultraviolet detector were studied, through the electrical performancetest, study the performance of the detector. All the detectors are responsive to solar-blind UV light. Forthe photoconductive detectors, the ascending time reaches within 10 ms at room temperature and above400 C. and the descending time reaches within 10 ms at 200 C and around 400 C. The responsivityfirstly increases and then decreases with the increase of temperature. At the same temperature, theresponsivity increases with the increase of bias. At 35 V bias and 600 C, the highest responsivity is 22mA/W. The response time of vertical Schottky detector increases first and then decreases with theincrease of temperature. The lowest response time is 0.5ms at room temperature，700 C and 15 Vapplied voltage. With the increase of temperature, the responsivity increases first, then decreases andfinally increases rapidly. At the same temperature, the increase of bias voltage leads to the increase ofresponsivity,which reaches 0.24A/W at 700C and 45 V.