硅基氧化锌纳米薄膜异质结构的电致发光性能研究
Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays
通过在P型纳米多孔硅柱状阵列（NSPA）衬底上生长N型氧化锌薄膜，从而得到ZnO/NSPA 的纳米异质结阵列。由伏安特性曲线（J-V）可以看出，纳米异质结在起始电压为1.5 V时呈现良好的整流特性：正向电流密度约为28.7 mA/cm2 (2.5 V)，漏电流密度约为0.15 mA/cm2，其整流率约为121（±2.5 V），并且纳米异质结中的电子转移特性遵循陷阱电荷限制电流模型（TCLC）。此外基于ZnO/NSPA的发光二极管实现了强的白光发射，其为以后新型、高效的硅基氧化锌固态照明设备的开发提供了可能性。
ZnO-nanofilm/Si-micropillar p-n nanoheterostructure arrays were prepared by growing n-type ZnO onto a p-type nanoporous Si pillar array. Its current-voltage characteristics of nanoheterostructure showed good rectifying behavior with onset voltage of ~1.5 V, forward current density of ~28.7 mA/cm2 at 2.5 V, leakage current density of ~0.15 mA/cm2 and rectifying ratio of ~121 at ±2.5 V. The electron transport across nanohetreostructure obey the trap-charge-limit current model. Moreover, strong white light electroluminescence from our ZnO-nanofilm/Si-micropillar light-emitting diode (LED) has been achieved, which could open up possibilities to build new ZnO/Si-based highly efficient solid-state lighting devices.
张常兴、许海军、孙晓绮、廛宇飞
光电子技术半导体技术电子元件、电子组件
氧化锌纳米硅纳米异质结电致发光
ZnOnanoporous Si pillar array（NSPAnanoheterostructureEL
张常兴,许海军,孙晓绮,廛宇飞.硅基氧化锌纳米薄膜异质结构的电致发光性能研究[EB/OL].(2012-12-27)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201212-924.点此复制
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