多孔硅表面磁控溅射沉积钛膜的形貌研究

itanium films were deposited on random etched silicon macropores and silicon macropore arrays with pore diameters of 2.5 μm, 12 μm, 15 μm. Morphologies of titanium films deposited with and without bias voltages and effect of etched silicon morphology on titanium film are discussed。The results without applied biases indicate that titanium film grow as columnar crystals and Volmer-Weber mode on silicon and a shadow effect is formed when titanium atoms are gathered on etched lines and edges of silicon. The results with applied biases indicate that the gathered titanium atoms on the etched lines and edges of silicon are reduced due to sputtering of the ions accelerated by bias. Consequently, the Ti thickness ratio of surface to pore bottom film is reduced. The deposition depth of titanium film in the macropores can reach more than 55 μm. It was clear that the morphologies of silicon macropores sureface and pore wall also pay an important role in the deposition of titanium film.