一种提高PN结空穴注入效率方法的研究
he study of a method to improve hole injection efficiency of PN junction
本文研究了一种提高PN结空穴注入效率的方法，该方法为在N区一侧与电极接触处增加一个P+区来提高PN结的空穴注入效率。运用MEDICI仿真软件仿真了无P+区和有P+区的两种结构的PN结正向导通特性，提取并对比了两者在相同电流密度下的空穴注入效率，仿真表明载流子寿命大于2 us时，不同的载流子寿命对空穴注入效率的影响很小；设定载流子寿命为20 us时，当PN结正向电流密度为75 A/cm2，有P+区的PN结空穴注入效率比无P+区的高8.3%；当PN结正向电流密度为750 A/cm2，有P+区的PN结空穴注入效率比无P+区的高7.1%。
In this paper, a method to enhance hole injection was studied, that a heavily doped P+ region formed at the edge of N region and electrode. Forward conduction characteristics of two kinds of PN structures were simulated by MEDICI, from which hole injection efficiency was extracted and compared at the same current density, find that the hole injection varies little when changing carrier's lifetime. when the carrier's life is 20 us, the hole injection efficiency of new PN structure is 8.3% higher than old structure at a PN current density of 75 A/cm2 and 7.1% higher than old structure at the current density of 750 A/cm2.
陈星弼、熊威、马克强、黄海猛
半导体技术
PN结注入效率欧姆接触
PN junctioninjection efficiencyohmic contact
陈星弼,熊威,马克强,黄海猛.一种提高PN结空穴注入效率方法的研究[EB/OL].(2015-02-06)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201502-82.点此复制
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