InGaAs/InGaAsP/Si SAGCM-APD的频率响应分析
Frequency Response Analysis of InGaAs/InGaAsP/Si SAGCM-APD
本文从载流子浓度连续性方程出发,利用矩阵代数的分析方法,分析器件每层结构的响应特性，从而推算出InGaAs/InGaAsP/Si SAGCM-APD的频率响应解析表达式。本文分析了增益和结构中不同区域厚度的变化对频率响应特性的影响，结果表明：3dB带宽随着增益的增大而减小，随着倍增区、吸收区、电荷区、渐变区厚度的增大而减小，但是在电荷区与渐变区厚度取值的理想范围内，电荷区与渐变区厚度的变化对3dB带宽和增益带宽积影响不大。在高增益条件下，倍增区厚度对3dB带宽和增益带宽积有显著影响。
he frequency response of InGaAs/InGaAsP/Si SAGCM-APD devices is calculated from the response of each layer using matrix algebra. The effect of gain and the width of each layer on the multilayer structure frequency response has been investigated. The decrease of the 3dB bandwidth is caused by the increase of the gain and the width of each layer.The effect of the width of charge layer and grading layer can be ignored in an appropriate range whereas a change of the avalanche region width affects the 3dB bandwidth and gain-bandwidth product at high avalanche gains remarkably.
张欣、黄辉、张帅、陶彦耘
光电子技术半导体技术微电子学、集成电路
SAGCM-APD频率响应3dB带宽增益带宽积
SAGCM-APDfrequency response3dB bandwidthgain-bandwidth product
张欣,黄辉,张帅,陶彦耘.InGaAs/InGaAsP/Si SAGCM-APD的频率响应分析[EB/OL].(2010-01-06)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201001-151.点此复制
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