阳极氧化SiO2退火工艺对硅光生少子复合的影响
Effect of anodic silicon oxide's anealing treatment on the minority carrier recombination in silicon
本论文采用电化学方法在绒面硅表面生长一层二氧化硅钝化层，在不同退火温度和时间下研究了硅的光生少数载流子复合过程。使用高频电容电压（C-V）及瞬态表面光伏衰减（SPV）技术研究分析了不同退火条件下SiO2/Si界面特性的变化及光生少数载流子的复合过程。通过实验发现较低温度下退火后固定正电荷减少，界面缺陷态没有变化，从而加快了光生少数载流子的复合。500℃下退火则界面缺陷态以及固定正电荷同时减少，界面缺陷态减少产生的影响更显著，起到了减慢光生少数载流子复合的作用。
SiO2 films were fabricated on textured Si wafers by anodic oxidation, and the Si wafers were annealing at different temperatures and time. The products were characterized by capacitance-voltage (C-V) and surface photovoltage (SPV) measurement. It was found that surface states and positive fixed charges changed with annealing temperatures. When the annealing temperature is low, just positive fixed charges were decreased, so minority carriers' recombination velocity was increased. Both surface states and positive fixed charges decreased when the annealing temperature arrive at 500℃, but the surface states were decreased significantly. Then minority carriers' recombination velocity was decreased.
文都子、乔建坤、骆英琳、刘维峰
半导体技术
微电子学与固体电子学二氧化硅阳极氧化退火
Microelectronics and Solid State ElectronicsSilicaAnodic Oxidationnnealing
文都子,乔建坤,骆英琳,刘维峰.阳极氧化SiO2退火工艺对硅光生少子复合的影响[EB/OL].(2013-04-26)[2025-08-21].http://www.paper.edu.cn/releasepaper/content/201304-532.点此复制
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