a(Mg1/3Ta2/3)O3薄膜的结构与介电性能
he structure and dielectric properties of Ca(Mg1/3Ta2/3)O3 thin films
用Pechini法通过不同次数涂覆成功制备了不同厚度的Ca(Mg1/3Ta2/3)O3均质薄膜，并用平行板电容器法测量了Ca(Mg1/3Ta2/3)O3薄膜介电性能。薄膜厚度随着涂覆次数增多而增加，同时其晶粒尺寸逐渐增大，表面粗糙度降低。由于热处理次数的增多，界面死层影响减弱,CMT薄膜电容器的介电常数增加至19.6(320nm时);在CMT厚度为320nm时,介电损耗最小为0.023.
a(Mg1/3Ta2/3)O3 thin films with different thickness have been prepared by Pechini's method on the Pt/Ti/SiO2/Si substrates and the dielectric properties have been measured by parallel plate capacitors method. The thickness of the films increased with the repeating heat treatment, while the crystalline grain size increased and the Surface Root Mean Square Roughness (RMS) decreased. The dielectric constant of the CMT thin films capacitors increased to 19.6(at 320nm) due to the reduction of the interfacial dead-layer effect. The dielectric loss decreased to the minimal value of 0.023 with the thickness of 320nm.
沈杰、曹越
物理学材料科学电子元件、电子组件
a(Mg1/3Ta2/3)O3，介电薄膜，热处理，界面死层
a(Mg1/3Ta2/3)O3 Dielectric film Heat treatment Dead layer
沈杰,曹越.a(Mg1/3Ta2/3)O3薄膜的结构与介电性能[EB/OL].(2014-01-16)[2025-08-21].http://www.paper.edu.cn/releasepaper/content/201401-719.点此复制
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