量子点层厚度对量子点发光二极管发光特性的影响
he effect of Quantum dot layer thickness on the quantum dot light emitting diode luminescence properties
本文报导采用湿法旋涂技术制备量子点发光二极管器件(QD-LEDs)，其中PEDOT作为空穴传输层，TFB作为空穴传输层过渡层，量子点作为发光层，采用无机二氧化钛(TiO2)作为空穴传输层，在相同的工艺条件下调节量子点层旋涂转速（从800rpm/s到1100rpm/s）制备不同厚度的量子点发光二极管发光器件(QD-LEDs)。实验结果表明，当量子点层的旋涂转速为900rpm/s时，此时的量子点层厚度为30nm,所制备的量子点发光二极管器件(QD-LEDs)的发光性能最好，开启电压最低，只有5.5V。
In this paper, we report on the fabrication of quantum dot light emitting diode devices (QD-LEDs)with spin-coating technique. In this structure of QD-LEDs , PEDOT was used as electron transport layer , quantum dots as emissive layer, and inorganic titanium dioxide (TiO2) as a hole transport layer. Under the same process conditions, different thickness of QDs can be obtained as the spin-coating speed varying from 800 rpm to 1100 rpm. It is found that the optimal performance of QD-LED can be achieved when the spin-coating speed of quantum dot layer is 900 rpm and the thickness of QD layer is 30 nm with the turn on voltage of 5.5 V.
李芝、陈静
光电子技术半导体技术
发光二极管量子点发光特性
light emitting diodes (LEDs)Quantum dot (QD)Luminescence properties
李芝,陈静.量子点层厚度对量子点发光二极管发光特性的影响[EB/OL].(2013-10-29)[2025-08-21].http://www.paper.edu.cn/releasepaper/content/201310-387.点此复制
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