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宏孔硅光电化学腐蚀光谱响应曲线测量

Measurement of spectral response curves for photo- electrochemical etching of macroporous silicon

中文摘要英文摘要

宏孔硅微通道阵列在光子晶体、硅微通道板、MEMS 器件等领域应用前景广阔。本文开展了宏孔硅光电化学腐蚀光谱响应特性研究,设计了硅光电化学腐蚀光谱响应曲线的测量实验,给出了n型硅在氢氟酸溶液中的光谱响应特性曲线。分别用卤素灯和中心波长为850nm的LED阵列作为光源,测量了硅光电化学腐蚀I-V曲线,对实验结果进行了理论分析。

he application fields of macroporous Si has increased considerably, for example, photonic crystals, Si microchannel plates, MEMS devices and so on. The spectral response characteristics of photo-electrochemical etching (PEC) of macroporous Si were researched, and the measurement experiments were designed. The spectral response curves of n-type silicon wafer was presented in aqueous HF. The halogen lamp and a center wavelength of 850nm LED array were used as the light source, then the current-voltage curves of photo-electrochemical etching of silicon were measured in aqueous HF using back-side illumination. The experimental results were analyzed theoretically in detail.

端木庆铎、兰春蕾、秦旭磊、王洋、姜振华、王国政、孙铭泽

光电子技术半导体技术

宏孔硅光电化学腐蚀光谱响应LED

macroporous siliconphoto-electrochemical etchingspectral responselight-emitting diode

端木庆铎,兰春蕾,秦旭磊,王洋,姜振华,王国政,孙铭泽.宏孔硅光电化学腐蚀光谱响应曲线测量[EB/OL].(2011-05-16)[2025-08-05].http://www.paper.edu.cn/releasepaper/content/201105-358.点此复制

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