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烧结温度对PVT制备定向多孔碳化硅陶瓷组织和性能的影响

Effects of SinteringTemperature on Preparation of Directional Porous Silicon Carbide Ceramic Microstructures and Properties via PVT

中文摘要英文摘要

对于碳化硅高温再结晶工艺获得的定向多孔碳化硅陶瓷,研究了烧结温度对材料组织结构和性能影响。结果表明在低于2050℃的温度烧结时,获得的多孔陶瓷为近似各向同性的均匀多孔结构。烧结温度超过2150℃时,定向多孔碳化硅陶瓷开始形成,随着温度的增加烧失率增加,轴向弯曲强度大于径向弯曲强度,径向强度值先稍微增加后下降。在0.3-0.5×105Pa的Ar气氛、烧结温度2300℃和时间2小时的条件下,对自由堆积松散成型的碳化硅样品进行烧结,可获得气孔形态和晶粒取向沿轴向定向排列的多孔碳化硅陶瓷,其气孔率高达63.2%,轴向与径向的强度比为5.34-5.69。

For the directional SiC porous ceramics obtained by the high-temperature recrystallization process, effects of firing temperature on the microstructure and mechanical properties were investigated. The results showed that the porous SiC ceramics porous ceramics obtained was the approximate isotropic homogeneous porous structure when the firing temperature was below 2050 ℃,. When the temperature exceeded 2150 ℃, the formation of orientation of porous silicon carbide began, and as the temperature increased, the weight loss increased, and the axial bending strength became higher than the radial value, which was slightly increased followed by decrease. With condition of an Ar atmosphere of 0.3-0.5 × 105Pa, the sintering temperature of 2300 ℃ and soaking time of 2 hours, the loosely packed silicon carbide samples were sintered and oriented porous silicon carbide ceramics with axially aligned pore and grain were obtained. The porosity reached to 63.2%, and the ratio of axial and radial strength was 5.34-5.69.

杨建锋、刘波波

材料科学

碳化硅多孔陶瓷高温再结晶

SiCPorous ceramicsHigh temperature recrystallization

杨建锋,刘波波.烧结温度对PVT制备定向多孔碳化硅陶瓷组织和性能的影响[EB/OL].(2014-02-01)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201402-14.点此复制

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