氮钝化对Te掺杂GaSb材料光学性质影响的研究

Gallium arsenide (GaSb) is an important material to realize high performance laser in middle-infrared range. However, the surface chemical properties of GaSb material is extremely active, which has high surface state density, causes Fermi level pinning. It effects on the performance of the GaSb-based devices seriously. The surface passivation can effectively decrease the surface state density and increase the surface luminescence intensity. Therefore, it's significant to carry out the research work of surface passivation of GaSb materials. In this paper, using precisely atomic layer etching technology of Te-doped GaSb surface by nitrogen plasma in the plasma enhanced atomic layer deposition (PEALD) system, increase the luminescence intensity. The luminescence property was investigated by using PL, the PL intensity increases by a factor of 4 at room temperature.At low temperature (10 K), the donor-acceptor pair（DAP） transition due to Te donor doping was observed, with a peak position of 0.772 eV (1606 nm).In addition, the change of band edge（BE）emission with temperature from 0.796 eV to 0.723 eV was also observed.