u/Ni/4H-SiC肖特基结型α粒子探测器的性能研究
Performance studies of Au/Ni/4H-SiC Schottky barrier detector for alpha-particle
采用4H-SiC材料制备了肖特基结型α粒子探测器,并且在室温常压条件下测试探测器的电学特性及探测性能。根据对正向I-V特性曲线的分析计算,4H-SiC肖特基结型探测器的势垒高度为1.37eV,理想因子为1.21。利用239Pu和241Am混合源研究探测器对α粒子的响应。零偏置条件下,探测器对α粒子具有响应,但是能量分辨率较差;在反向电压为50V时,探测器的漏电流为0.23nA,探测器获得最佳α粒子能量分辨率,对5156keV和5486keV的α粒子的能量分辨率分别为3.00%和2.90%。
In this paper, the Au/Ni/4H-SiC Schottky barrier detectors for alpha-particle were fabricated and their electrical characteristics and detection peiformances were measured at room temperature and pressure. The Schottky barrier height of 1.37eV and the ideality factor of 1.21 was calculated from the forward currrent-voltage characteristic. The 239Pu and 241Am mixed radiation source was used to measure the responses of detector to the alpha-particle. At zero applied bias, the detector has the response for the alpha-particles, but the energy resolution is poor. The detector leakage current were observed to be 0.23nA at a reverse bias voltage of 50V. A better energy resolution of 3.00% and 2.90% for the 5156keV and 5486keV alpha-particle was obtained.
杜国同、夏晓川、梁红伟、叶鑫
粒子探测技术、辐射探测技术、核仪器仪表半导体技术
微电子学与固体电子学α粒子探测器4H-SiC肖特基二极管能量分辨率
Microelectronics and Solid-State Electronicsalpha-particle detector4H-SiCSchottky barrier diodeenergy resolution
杜国同,夏晓川,梁红伟,叶鑫.u/Ni/4H-SiC肖特基结型α粒子探测器的性能研究[EB/OL].(2018-04-24)[2025-08-04].http://www.paper.edu.cn/releasepaper/content/201804-237.点此复制
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