L波段CMOS低噪声放大器设计
esign of L-Band CMOS Low-Noise Amplifier
作为卫星导航系统中导航接收机前端的第一个模块，低噪声放大器性能极其关键。本文对CMOS工艺下基于L波段的低噪声放大器进行研究。分析了源简并型共源共栅放大器结构以及导数叠加原理，进一步优化电感版图设计，提高品质因数，进而提高整体性能。基于SMIC180nm工艺，完成电路版图设计后流片。芯片采用1.8V和3.3V共同供电，测试结果在工作频率上，噪声系数为4.3db、增益为18.2db、S11为-16.9db、S22为-21.2db，输出三阶交调点19.7db。
s the first module in the front end of navigation receivers in satellite systems, low noise amplifier\'s performance is critical. The L-band low-noise amplifiers are studied in CMOS technology in this paper. The structure of the source degenerate cascode amplifier and the principle of derivative superposition are analyzed to further optimize the inductor layout design, improve the quality factor, and improve the overall performance. Based on the SMIC 180nm process, the circuit layout is completed after the design. The chip uses 1.8V and 3.3V to supply power together. The test results show that the noise figure is 4.3db, the gain is 18.2db, the S11 is -16.9dB, and the S22 is -21.2db at the operating frequency. The third-order intercept point is 19.7db.
王兴华、雷蕾
微电子学、集成电路电子电路无线电导航
微电子学与固体电子学低噪声放大器导数叠加射频集成电路
microelectronics and solid state electronicelow noise amplifierdervative superpositionrf integrated circuits
王兴华,雷蕾.L波段CMOS低噪声放大器设计[EB/OL].(2018-07-04)[2025-08-02].http://www.paper.edu.cn/releasepaper/content/201807-12.点此复制
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